Turbo Power Semiconductor Inc. is built upon decades of work beginning in the early 1980s with the development of first-generation power MOSFET and IGBT technologies, and continuing through more than three decades of advanced research in the United States.

This work has shaped the development of modern power semiconductor technologies globally, spanning high-voltage, high-power, and high-efficiency devices used in grid infrastructure, transportation, and industrial energy systems.

Turbo Power Semiconductor was created to translate this deep technical foundation and strong, defensible IP into disruptive power semiconductor chips.