Purpose-built
800V HVDC AI data centers, solid-state transformers, and ultra-fast DC protection systems.
Dozens of issued patents
Including foundational power device inventions such as the TurboMOSFET, TurboBipolar and Ultra Fast SiCFET.
Widespread applications
In medium voltage drive, renewable energy systems, and electric vehicle and charging systems.
Turbo Power Semiconductor Inc. is built upon decades of work beginning in the early 1980s with the development of first-generation power MOSFET and IGBT technologies, and continuing through more than three decades of advanced research in the United States.
This work has shaped the development of modern power semiconductor technologies globally, spanning high-voltage, high-power, and high-efficiency devices used in grid infrastructure, transportation, and industrial energy systems.
Turbo Power Semiconductor was created to translate this deep technical foundation and strong, defensible IP into disruptive power semiconductor chips.